Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C-V measurements
SCIE
SCOPUS
- Title
- Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C-V measurements
- Authors
- Kim, J; Kim, B
- Date Issued
- 1998-11
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- An extraction method for device dimensions and lateral channel doping profiles of a VIGBT (vertical insulated-gate bipolar transistor) has been developed. Through two-dimensional numerical analysis and C-V characterizations, the lateral device structure parameters could be extracted. The extracted device parameters are in a good agreement with the expected values of fabricated devices. The method proposed in this paper can be very useful for analyzing the electrical characteristics of a VIGBT. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20593
- DOI
- 10.1016/S0038-1101(98)00202-0
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 42, no. 11, page. 2113 - 2116, 1998-11
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- There are no files associated with this item.
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