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Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs SCIE SCOPUS
- Title
- Surface recombination related frequency dispersion of current gain in AlGaAs/GaAs HBTs
- Date Issued
- 1998-05-14
- Publisher
- IEE-INST ELEC ENG
- Abstract
- The dispersion effect of current gain related to surface recombination in AlGaAs/GaAs HBTs has been studied. For an HBT with an emitter area of 3 x 20 mu m(2), the surface recombination current-to-total base current ratio is similar to 0.47 at < 100MHz, and the ratio is decreased to zero at frequencies between 100MHz and 3GHz, clearly indicating that the current gain is dispersive.
- Keywords
- GAAS-MESFETS
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 34, no. 10, page. 1031 - 1033, 1998-05-14
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Related Researcher
- 김범만KIM, BUM MAN
- Dept of Electrical Enginrg