A highly accurate mesfet model to predict the nonlinear behavior of a linear power amplifier

Abstract

A new channel current model to accurately represent I-V dimes has been developed, and its effect on the nonlinear parameters of MESFET models such as I-ds, C-gs, C-gd, and C-ds has been investigated for lineal power amplifier design. The channel current model should be constructed from pulsed I-V data at operation bias point and die nonlinear behavior of a GaAs MESFET is strongly dependent on the C-gs model. (C) 1996 John Wiley & Sons, Inc.