Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors
SCIE
SCOPUS
- Title
- Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors
- Authors
- Kim, JG; Ihn, B; Kim, B; Lee, KG; Lee, W; Lee, SW
- Date Issued
- 1996-04
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- An extraction method for device dimensions and the lateral channel doping profile of a vertical double-diffused MOS transistor has been developed. Using C-V characterization and two-dimensional numerical analysis, the lateral device structure parameter could be extracted. The extracted device parameters are in good agreement with the expected values for a fabricated device sample. The proposed method in this paper can be very useful for analysing the electrical characteristics of VDMOS transistors.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21616
- DOI
- 10.1016/0038-1101(95)00187-5
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 39, no. 4, page. 541 - 546, 1996-04
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- There are no files associated with this item.
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