2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY
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- Title
- 2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY
- Authors
- KIM, H; LEE, HG; LEE, JL; MUN, JK; PARK, HM
- Date Issued
- 1994-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- A state-of-the-art GaAs power MESFET operating at a drain bias of 2.9 V has been developed using the high-low doped channel structure grown by molecular beam epitaxy. The device has 0.6 mum gate length and 16 mm gate width. The power performance tested at a 2.9 V drain bias and 900 MHz operation frequency was output power of 31.5 dBm with 11.5 dB gain and 64% power-added efficiency.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21921
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 15, no. 9, page. 324 - 326, 1994-09
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- There are no files associated with this item.
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