SULFIDE TREATED GAAS MISFETS WITH GATE INSULATOR OF PHOTO-CVD GROWN P3N5 FILM

Abstract

Sulfide passivated GaAs MISFET's with the gate insulator of photo-CVD grown P3N5, films have been successfully fabricated. The device shows the drain current instability less than 22% for the period of 1.0 s approximately 1.0 X 10(4) s, due to excellent properties of sulfide treated P3N5/GaAs interrace. The effective electron mobility and extrinsic transconductance of the device are about 1300 cm2/V . sec and 133 mS, respectively, at room temperature. To estimate the effects of sulfide treatment on P3N5/GaAs interfacial properties, GaAs-MIS diodes are also fabricated.