3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES
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SCOPUS
- Title
- 3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES
- Authors
- KIM, H; KWON, O; LEE, JJ; LEE, JL; MUN, JK; PARK, HM; PARK, SC
- Date Issued
- 1994-04-28
- Publisher
- IEE-INST ELEC ENG
- Abstract
- High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3V have been developed. The MESFETs with 0.6mum gate length and 12mm gate width show a maximum drain current density of 310mA/mm and a uniform transconductance of around 112mS, ranging from V(gs) = -1.8V to 0.5V. The device tested at 3.3V drain bias and 900MHz demonstrates an output power of 30.9dBm with associate power-added-efficiency of 65% for an input power of 20dBm.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21956
- DOI
- 10.1049/el:19940477
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 30, no. 9, page. 739 - 740, 1994-04-28
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- There are no files associated with this item.
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