Highly linear three-way Doherty amplifier with uneven power drive for repeater system

Abstract

We have demonstrated a high linear three-way Doherty amplifier by applying uneven power drive and optimizing the peaking biases and load impedances. The amplifier has been implemented at 2.14 GHz using 190-W peak envelope power laterally diffused metal-oxide-semiconductor field-effect transistors. For comparison, a class AB biased amplifier is tested as it's counterpart. The two-tone signal and forward-link wideband code-division multiple access (WCDMA) signal have been selected as test signals. At 42 dBm (12.5-dB backed-off output power), there are large improvements in the third- and fifth-order intermodulation distortions. For the forward-link four-carrier WCDMA signal, the adjacent channel leakage ratio (ACLR) performances at 5-MHz and 10-MHz offsets are -52.5 dBc and -53.4 dBc, respectively, and satisfy the generally medium high power amplifier linearity target without using any other linearization circuits. In comparison with the class AB amplifier, the three-way Doherty amplifier with uneven power drive has 9.8-dB lower ACLR at 5-MHz offset while maintaining a comparable drain efficiency of 10.2%.