Highly linear three-way Doherty amplifier with uneven power drive for repeater system
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- Title
- Highly linear three-way Doherty amplifier with uneven power drive for repeater system
- Authors
- Kim, I; Cha, JY; Hong, SC; Kim, J; Woo, YY; Park, CS; Kim, B
- Date Issued
- 2006-04
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- We have demonstrated a high linear three-way Doherty amplifier by applying uneven power drive and optimizing the peaking biases and load impedances. The amplifier has been implemented at 2.14 GHz using 190-W peak envelope power laterally diffused metal-oxide-semiconductor field-effect transistors. For comparison, a class AB biased amplifier is tested as it's counterpart. The two-tone signal and forward-link wideband code-division multiple access (WCDMA) signal have been selected as test signals. At 42 dBm (12.5-dB backed-off output power), there are large improvements in the third- and fifth-order intermodulation distortions. For the forward-link four-carrier WCDMA signal, the adjacent channel leakage ratio (ACLR) performances at 5-MHz and 10-MHz offsets are -52.5 dBc and -53.4 dBc, respectively, and satisfy the generally medium high power amplifier linearity target without using any other linearization circuits. In comparison with the class AB amplifier, the three-way Doherty amplifier with uneven power drive has 9.8-dB lower ACLR at 5-MHz offset while maintaining a comparable drain efficiency of 10.2%.
- Keywords
- adjacent channel leakage ratio (ACLR); Doherty amplifier; third- and fifth-order intermodulation distortion (IMD3, IMD5); wideband code-division multiple access (WCDMA)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24092
- DOI
- 10.1109/LMWC.2006.87
- ISSN
- 1531-1309
- Article Type
- Article
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 16, no. 4, page. 176 - 178, 2006-04
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