A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube
SCIE
SCOPUS
- Title
- A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube
- Authors
- Son, JY; Ryu, S; Park, YC; Lim, YT; Shin, YS; Shin, YH; Jang, HM
- Date Issued
- 2010-12
- Publisher
- AMER CHEMICAL SOC
- Abstract
- We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SWOT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications.
- Keywords
- ferroelectric polymer nanodot; carbon nanotube; field-effect transistor; nonvolatile memory device; FIELD-EFFECT TRANSISTORS; NANOSTRUCTURES; COPOLYMERS; MECHANISM; ARRAYS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25135
- DOI
- 10.1021/NN1021296
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS NANO, vol. 4, no. 12, page. 7315 - 7320, 2010-12
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.