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Cited 97 time in webofscience Cited 105 time in scopus
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Nanoscale Memory Devices SCIE SCOPUS

Title
Nanoscale Memory Devices
Authors
Chung, ADeen, JLee, JSMeyyappan, M
Date Issued
2010-10-15
Publisher
IOP
Abstract
This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO2.
Keywords
RANDOM-ACCESS MEMORY; PHASE-CHANGE MEMORY; FIELD-EFFECT TRANSISTORS; NAND FLASH MEMORY; MOLECULAR ELECTRONICS; NONVOLATILE MEMORY; ELECTRICAL-PROPERTIES; SWITCHING PHENOMENA; CHANGE NANOWIRES; THIN-FILM
URI
https://oasis.postech.ac.kr/handle/2014.oak/25776
DOI
10.1088/0957-4484/21/41/412001
ISSN
0957-4484
Article Type
Article
Citation
NANOTECHNOLOGY, vol. 21, no. 41, page. 412001-1 - 412001-22, 2010-10-15
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이정수LEE, JEONG SOO
Dept of Electrical Enginrg
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