Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs)
SCIE
SCOPUS
- Title
- Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs)
- Authors
- Park, YK; Umar, A; Kim, JS; Yang, HY; Lee, JS; Hahn, YB
- Date Issued
- 2009-10
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Abstract
- The electrical properties of single ZnO nanowire were examined by fabricating single nanowire based field effect transistors (FETs) via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. The ZnO nanowires were synthesized by non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The as-grown ZnO nanowires were characterized in terms of their structural and optical properties which confirmed that the grown nanowires are well-crystallized with the wurtzite hexagonal phase and exhibiting good optical properties. The peak transconductances of the back- and top-gate FETs were similar to 3.2 and similar to 7.4 nS, respectively. The field effect mobilities (mu(eff)) for the back- and top-gate FETs were measured to be 3.4 and 7.87 cm(2)/V.s, respectively. Our studies conclude that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches.
- Keywords
- ZnO Nanowires; Field Effect Transistors; Optical and Electrical Properties; THERMAL EVAPORATION; OPTICAL-PROPERTIES; ZINC-OXIDE; GROWTH-MECHANISM; CHEMICAL SENSOR; NANOSTRUCTURES; NANOBELTS; NANORODS; PHOTOLUMINESCENCE; FABRICATION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25896
- DOI
- 10.1166/JNN.2009.1252
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 9, no. 10, page. 5839 - 5844, 2009-10
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