DC Field | Value | Language |
---|---|---|
dc.contributor.author | Heo, K | - |
dc.contributor.author | Park, JW | - |
dc.contributor.author | Yang, JE | - |
dc.contributor.author | Koh, J | - |
dc.contributor.author | Kwon, JH | - |
dc.contributor.author | Jhon, YM | - |
dc.contributor.author | Kim, M | - |
dc.contributor.author | Jo, MH | - |
dc.contributor.author | Hong, S | - |
dc.date.accessioned | 2016-04-01T02:54:41Z | - |
dc.date.available | 2016-04-01T02:54:41Z | - |
dc.date.created | 2010-05-10 | - |
dc.date.issued | 2010-04-09 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.other | 2010-OAK-0000021207 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25970 | - |
dc.description.abstract | Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have received significant attention as high performance flexible devices. However, most previous assembly methods can generate only specifically-shaped devices and require unconventional facilities, which has been a major hurdle for industrial applications. Herein, we report a simple but very efficient method for assembling Si-NWs into virtually generally-shape patterns on flexible substrates using only conventional microfabrication facilities, allowing us to mass-produce highly flexible low-noise devices. As proof of this method, we demonstrated the fabrication of highly bendable top-gate transistors based on Si-NWs. These devices showed typical n-type semiconductor behaviors, and exhibited a much lower noise level compared to previous flexible devices based on organic conductors or other nanowires. In addition, the gating behaviors and low-noise characteristics of our devices were maintained, even under highly bent conditions. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.title | Large-scale assembly of highly flexible low-noise devices based on silicon nanowires | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | - |
dc.identifier.doi | 10.1088/0957-4484/21/14/145302 | - |
dc.author.google | Heo, Kwang | - |
dc.author.google | Park, Jee Woo | - |
dc.author.google | Yang, Jee-Eun | - |
dc.author.google | Koh, Juntae | - |
dc.author.google | Kwon, Ji-Hwan | - |
dc.author.google | Jhon, Young Min | - |
dc.author.google | Kim, Miyoung | - |
dc.author.google | Jo, Moon-Ho | - |
dc.author.google | Hong, Seunghun | - |
dc.relation.volume | 21 | - |
dc.relation.issue | 14 | - |
dc.contributor.id | 10176415 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.21, no.14 | - |
dc.identifier.wosid | 000275652200016 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 14 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 21 | - |
dc.contributor.affiliatedAuthor | Park, JW | - |
dc.contributor.affiliatedAuthor | Jo, MH | - |
dc.identifier.scopusid | 2-s2.0-77949558933 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.description.scptc | 5 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordPlus | 1/F NOISE | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | NANOTUBES | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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