Large-scale assembly of highly flexible low-noise devices based on silicon nanowires
SCIE
SCOPUS
- Title
- Large-scale assembly of highly flexible low-noise devices based on silicon nanowires
- Authors
- Heo, K; Park, JW; Yang, JE; Koh, J; Kwon, JH; Jhon, YM; Kim, M; Jo, MH; Hong, S
- Date Issued
- 2010-04-09
- Publisher
- IOP PUBLISHING LTD
- Abstract
- Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have received significant attention as high performance flexible devices. However, most previous assembly methods can generate only specifically-shaped devices and require unconventional facilities, which has been a major hurdle for industrial applications. Herein, we report a simple but very efficient method for assembling Si-NWs into virtually generally-shape patterns on flexible substrates using only conventional microfabrication facilities, allowing us to mass-produce highly flexible low-noise devices. As proof of this method, we demonstrated the fabrication of highly bendable top-gate transistors based on Si-NWs. These devices showed typical n-type semiconductor behaviors, and exhibited a much lower noise level compared to previous flexible devices based on organic conductors or other nanowires. In addition, the gating behaviors and low-noise characteristics of our devices were maintained, even under highly bent conditions.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25970
- DOI
- 10.1088/0957-4484/21/14/145302
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 21, no. 14, 2010-04-09
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- There are no files associated with this item.
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