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Semiconductor-Dielectric Blends: A Facile All Solution Route to Flexible All-Organic Transistors SCIE SCOPUS

Title
Semiconductor-Dielectric Blends: A Facile All Solution Route to Flexible All-Organic Transistors
Authors
Lee, WHLim, JAKwak, DCho, JHLee, HSChoi, HHCho, K
Date Issued
2009-11-13
Publisher
WILEY-V C H VERLAG GMBH
Abstract
A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.
Keywords
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; PHASE-SEPARATION; POLYMER; PERFORMANCE; MORPHOLOGY; INTERFACES; TRANSPORT; MOBILITY; BINARY
URI
https://oasis.postech.ac.kr/handle/2014.oak/26193
DOI
10.1002/ADMA.200900277
ISSN
0935-9648
Article Type
Article
Citation
ADVANCED MATERIALS, vol. 21, no. 42, page. 4243 - +, 2009-11-13
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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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