DC Field | Value | Language |
---|---|---|
dc.contributor.author | RAEIS HOSSEININILO | - |
dc.contributor.author | Lee, JS | - |
dc.date.accessioned | 2016-04-01T08:06:53Z | - |
dc.date.available | 2016-04-01T08:06:53Z | - |
dc.date.created | 2015-02-11 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.other | 2015-OAK-0000030675 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27251 | - |
dc.description.abstract | A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ACS NANO | - |
dc.relation.isPartOf | ACS NANO | - |
dc.title | Resistive switching memory based on bioinspired natural solid polymer electrolytes | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1021/NN5055909 | - |
dc.author.google | Raeis Hosseini N., Lee J.-S. | - |
dc.relation.volume | 9 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 419 | - |
dc.relation.lastpage | 426 | - |
dc.contributor.id | 10174741 | - |
dc.relation.journal | ACS NANO | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS NANO, v.9, no.1, pp.419 - 426 | - |
dc.identifier.wosid | 000348619000044 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 426 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 419 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 9 | - |
dc.contributor.affiliatedAuthor | Lee, JS | - |
dc.identifier.scopusid | 2-s2.0-84921793127 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 64 | - |
dc.description.scptc | 43 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | CHITOSAN | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | NANOIONICS | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | chitosan | - |
dc.subject.keywordAuthor | natural solid polymers | - |
dc.subject.keywordAuthor | redox-based memory | - |
dc.subject.keywordAuthor | solution processes | - |
dc.subject.keywordAuthor | resistive switching memory | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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