Resistive switching memory based on bioinspired natural solid polymer electrolytes
SCIE
SCOPUS
- Title
- Resistive switching memory based on bioinspired natural solid polymer electrolytes
- Authors
- RAEIS HOSSEININILO; Lee, JS
- Date Issued
- 2015-01
- Publisher
- ACS NANO
- Abstract
- A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27251
- DOI
- 10.1021/NN5055909
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS NANO, vol. 9, no. 1, page. 419 - 426, 2015-01
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- There are no files associated with this item.
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