Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer
SCIE
SCOPUS
- Title
- Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer
- Authors
- Lee, SH; Kim, YR; Hong, JH; Jeong, EY; Yoon, JS; Baek, CK; Kim, DW; LEE, JEONG SOO; Jeong, YH
- Date Issued
- 2014-07
- Publisher
- IEEE
- Abstract
- The low-frequency noise (LFN) of a p-type nanowire FET (p-NWFET) was characterized and compared with that of an n-type NWFET (n-NWFET) in terms of dominant noise source and its location in the channel region. An inverse proportional dependence of the noise level on channel diameter was observed in the p-NWFET but not in the n-NWFET. The LFN was observed to be mainly generated by Hooge mobility fluctuation in the p-NWFET. Under a switched biasing condition, p-NWFET showed no substantial LFN reduction (in contrast to the n-NWFET), indicating that the carrier number fluctuation was insignificant. This was due to the compressive stress induced by embedded SiGe with heavier transverse effective hole mobility.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27297
- DOI
- 10.1109/LED.2014.2323255
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 7, page. 702 - 704, 2014-07
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- There are no files associated with this item.
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