Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs

Abstract

An experimental method of extracting the effective channel length L-eff from measured gate tunneling current (I-g) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I-gsd) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I-gc) was obtained by subtracting I-gsd from I-g. L-eff was calculated using a linear extrapolation of the I-gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L-eff which does not require any additional assumptions and parameter extraction.