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A 40-W BALANCED GaN HEMT CLASS-E POWER AMPLIFIER WITH 71% EFFICIENCY FOR WCDMA BASE STATION SCIE SCOPUS
- Title
- A 40-W BALANCED GaN HEMT CLASS-E POWER AMPLIFIER WITH 71% EFFICIENCY FOR WCDMA BASE STATION
- Date Issued
- 2009-03
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- A balanced class-E power amplifier (PA) using a push-pull GaN HEMT for high power and high efficiency is represented. For validation, a class-E PA is designed and implemented using a push-pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the balanced GaN HEMT class-E PA shows a drain efficiency and power-added efficiency (PAE) of 71% and 67.4% at an output power of 40 W with a gain of 13 dB through the significant harmonic suppression of below -51 dBc. (c) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 842-845, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24150
- Keywords
- class-E power amplifier; efficiency; gallium nitride (GaN); harmonic
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 51, no. 3, page. 842 - 845, 2009-03
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg