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Quantum Hall effect devices of delta-doped Al(0.25)Ga(0.75)AS/In(0.25)Ga(0.75)AS/GaAs pseudomorphic heterostructures grown by LP-MOCVD SCIE
- Title
- Quantum Hall effect devices of delta-doped Al(0.25)Ga(0.75)AS/In(0.25)Ga(0.75)AS/GaAs pseudomorphic heterostructures grown by LP-MOCVD
- Date Issued
- 1996-01
- Publisher
- IOP PUBLISHING LTD
- Abstract
- Quantum Hall effect devices based on delta-doped Al0.25Ga0.75In0.25Ga0.75As/GaAs pseudomorphic heterostructure materials grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD) are sucessfully fabricated. A high electron mobility of 7200 cm(2)/V . s with a sheet carrier density of 2.0 x 10(12)cm(-2) has been achieved at room temperature. The temperature coefficient of product sensitivity is -0.1%/K. The minimum detectable magnetic field (B-min) of 3 mu T at 1 Hz is achieved due to the high electron mobility.
- Keywords
- SUPERLATTICE STRUCTURES
- ISSN
- 0951-3248
- Article Type
- Article
- Citation
- INSTITUTE OF PHYSICS CONFERENCE SERIES, vol. 145, page. 887 - 892, 1996-01
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg