DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, H | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Baek, S | - |
dc.contributor.author | Jeong, W.H | - |
dc.contributor.author | Lee, Y | - |
dc.contributor.author | Yang, T | - |
dc.contributor.author | Lee, J.-S. | - |
dc.date.accessioned | 2017-07-19T12:54:37Z | - |
dc.date.available | 2017-07-19T12:54:37Z | - |
dc.date.created | 2016-12-21 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/36646 | - |
dc.description.abstract | This letter presents the electrical characteristics of newly proposed network-channel low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs). Due to effective reduction of grain boundary traps and enhanced gate controllability, the network-channel TFTs show better subthreshold slope, lower threshold voltage, and higher ON- OFF current ratio, compared with conventional planar devices. The extracted grain boundary trap density and the interface trap density are significantly reduced in the network-channel devices. In addition, the network-channel devices show higher immunity to hot-carrier stressing, which are confirmed from the low-frequency noise characteristics with various stressing time. These results suggest that the network-channel devices are very promising for next-generation LTPS TFT applications. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE Electron Device Letters | - |
dc.title | Highly Enhanced Performance of Network-Channel Polysilicon Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2016.2636924 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, no.99 | - |
dc.identifier.wosid | 000395470700009 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 99 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.contributor.affiliatedAuthor | Lee, J.-S. | - |
dc.identifier.scopusid | 2-s2.0-85011278005 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | ARTICLE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | TFT | - |
dc.subject.keywordAuthor | Grain boundary | - |
dc.subject.keywordAuthor | thin film transistor | - |
dc.subject.keywordAuthor | LTPS | - |
dc.subject.keywordAuthor | low-frequency noise | - |
dc.subject.keywordAuthor | hot carrier injection | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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