DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park YS | - |
dc.contributor.author | Kim SJ | - |
dc.contributor.author | Lyu SH | - |
dc.contributor.author | Lee BH | - |
dc.contributor.author | Sung MM | - |
dc.contributor.author | Lee J | - |
dc.contributor.author | Lee JS | - |
dc.date.accessioned | 2017-07-19T14:10:53Z | - |
dc.date.available | 2017-07-19T14:10:53Z | - |
dc.date.created | 2017-04-28 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/38168 | - |
dc.description.abstract | In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (Au-NP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., Au-NP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future. | - |
dc.language | English | - |
dc.publisher | American Scientific Publishers | - |
dc.relation.isPartOf | Journal of Nanoscience and Nanotechnology | - |
dc.title | Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/JNN.2012.4688 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Journal of Nanoscience and Nanotechnology, v.12, no.2, pp.1344 - 1347 | - |
dc.identifier.wosid | 000303280000090 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 1347 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1344 | - |
dc.citation.title | Journal of Nanoscience and Nanotechnology | - |
dc.citation.volume | 12 | - |
dc.contributor.affiliatedAuthor | Lee JS | - |
dc.identifier.scopusid | 2-s2.0-84861676459 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordAuthor | Non-Volatile Memory | - |
dc.subject.keywordAuthor | Zinc Oxide | - |
dc.subject.keywordAuthor | Metallic Nanoparticles | - |
dc.subject.keywordAuthor | Charge Trapping | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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