Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements
SCIE
SCOPUS
- Title
- Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements
- Authors
- Park YS; Kim SJ; Lyu SH; Lee BH; Sung MM; Lee J; Lee JS
- Date Issued
- 2012-02
- Publisher
- American Scientific Publishers
- Abstract
- In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (Au-NP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., Au-NP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/38168
- DOI
- 10.1166/JNN.2012.4688
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- Journal of Nanoscience and Nanotechnology, vol. 12, no. 2, page. 1344 - 1347, 2012-02
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