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Browsing "1. Journal Papers" by  SubjectBARRIER HEIGHT

전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하
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Showing results 1 to 5 of 5
Article
Characteristics of Schottky contacts on n-type 4H-SiC using IrO2 and RuO2SCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 94, no. 9, page. 6159 - 6166, 2003-11-01

Article
Effect of surface treatment using Cl-2 inductively coupled plasma on Schottky characteristics of n-type 4H-SiCSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 150, no. 1, page. G45 - G48, 2003-01

Article
Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistorsSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 21, no. 5, page. 2133 - 2137, 2003-09

Article
Investigation of IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructureSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 95, no. 2, page. 698 - 704, 2004-01-15

Article
Thermally stable AlGaN/GaN heterostructure field-effect transistor with IrO2 gate electrodeSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 24, no. 3, page. 1303 - 1307, 2006-05

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