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Showing results 1 to 14 of 14

Article

Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor depositionSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 80, no. 21, page. 3955 - 3957, 2002-05-27

Article

Charge state of vacancy defects in Eu-doped GaNSCIESCOPUS

Physical Review b, vol. 96, no. 064308, 2017-08

Article

Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 16, no. 5, page. 2725 - 2728, 1998-09

Article

Early stage growth behavior of ZnO nanoneedle arrays on Al2O3(0001) by metalorganic chemical vapor depositionSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 281, no. 2-4, page. 446 - 451, 2005-08-01

Article

Evidence for the formation of n(+)-GaAs layer in Pd/Ge ohmic contact to n-type GaAsSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 82, no. 11, page. 5460 - 5464, 1997-12-01

Article

GaN MSM ultraviolet photodetectors with transparent and thermally stable RuO2 and IrO2 Schottky contactsSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 151, no. 3, page. G190 - G195, 2004-03

Article

Microstructure of GaN nucleation layer during initial stage MOCVD growthSCIESCOPUS

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 82, no. 1-3, page. 108 - 110, 2001-05-22

Article

Multilayer calculation on SR signal during growth of ZnO nanorodSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 53, no. 1, page. 388 - 391, 2008-07

Article

Photoluminescent characteristics of Ni-catalyzed GaN nanowiresSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 89, no. 4, 2006-07-24

Article

Structural evolution of Pd/GaN(0001) films during postannealingSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 3, no. 7, page. 335 - 337, 2000-07

Article

Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser depositionSCIESCOPUS

JOURNAL OF CRYSTAL GROWTH, vol. 312, no. 24, page. 3588 - 3591, 2010-12-01

Article

Three-Dimensional Branched Nanowire Heterostructures as Efficient Light-Extraction Layer in Light-Emitting DiodesSCIESCOPUS

Advanced Functional Materials, vol. 24, no. 22, page. 3384 - 3391, 2014-06

Article

van der Waals gap-inserted light-emitting p-n heterojunction of ZnO nanorods/graphene/p-GaN filmSCIESCOPUSKCI

CURRENT APPLIED PHYSICS, vol. 20, no. 2, page. 352 - 357, 2020-02

Article

ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistorSCIESCOPUS

THIN SOLID FILMS, vol. 516, no. 7, page. 1523 - 1528, 2008-02-15

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