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Article
GaAs MESFET fabrication using (NH4)(2)S-x solution sulphur diffusion techniqueSCIESCOPUS

ELECTRONICS LETTERS, vol. 34, no. 11, page. 1152 - 1153, 1998-05-28

Article
Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contactsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 19, no. 12, page. 481 - 483, 1998-12

Article
Degradation mechanism of GaAs MESFETsSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 38, no. 1, page. 171 - 178, 1998-01

Article
Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layerSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 84, no. 2, page. 911 - 917, 1998-07-15

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