Open Access System for Information Sharing

Login Library
검색

  OASIS Repository@POSTECHLIBRARY

Browsing "Department of Electrical Engineering (전자전기공학과)" by  JournalMICROELECTRONICS RELIABILITY

전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하
All 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:
Showing results 1 to 6 of 6
Article
Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFETSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 100-101, 2019-09

Article
Effect of HfSiON thickness on electron trap distributions of HfSiON/SiO2 nMOSFET under PBTISCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 100, 2019-09

Article
Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFETSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 100, 2019-09

Article
Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stressSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 88-90, page. 186 - 190, 2018-09

Article
Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instabilitySCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 88-90, page. 191 - 195, 2018-09

Article
Voltage dependent degradation of HfSiON/SiO2 nMOSFETs under positive bias temperature instabilitySCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 54, no. 11, page. 2383 - 2387, 2014-11

1
개인정보처리방침 Personal Information Protection Policy

library@postech.ac.kr Tel: 054-279-2548

Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.

Browse

Login Library Help