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Article
Improved Electrical Characteristics of Honeycomb-Nanowire ISFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 34, no. 8, page. 1059 - 1061, 2013-08

Article
1/f Noise Characteristics of Surface-Treated Normally-Off Al2O3/GaN MOSFETsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 3, page. 229 - 231, 2015-03

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