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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer
SCIE
SCOPUS
IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 7, page. 702 - 704, 2014-07
Lee, SH
;
Kim, YR
;
Hong, JH
;
Jeong, EY
;
Yoon, JS
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Baek, CK
;
Kim, DW
;
LEE, JEONG SOO
;
Jeong, YH
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low frequency noise
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Nanowire FET
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switched biasing 1/f noise
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