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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Performance and Variations Induced by Single Interface Trap of Nanowire FETs at 7-nm Node
SCIE
SCOPUS
IEEE Transaction on Electron Devices, vol. 64, no. 2, page. 339 - 345, 2017-02
Yoon, J.-S
;
Kim, K
;
Rim, T
;
Baek, C.-K.
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DENSITY
1
DEVICE
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interface trap
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MODEL
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nanowire (NW) FET
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OFF-state current
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RC delay
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SILICON
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SIMULATION
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variability
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IEEE Transaction on Electron Devices
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