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Department of Creative IT Engineering (창의IT융합공학과)
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Article
Process-Induced Variations of 10-nm Node Bulk nFinFETs Considering Middle-of-Line Parasitics
SCIE
SCOPUS
IEEE Transactions on Electron Devices, vol. 63, no. 9, page. 3399 - 3405, 2016-09
Yoon, JS
;
Chang-Ki Baek
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Baek, RH
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10-nm node
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DEVICE
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effective current
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FINFET
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OFF-state current
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process-induced variability
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RANDOM DOPANT
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RC delay.
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STATISTICAL VARIABILITY
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