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Article
A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube
SCIE
SCOPUS
ACS NANO, vol. 4, no. 12, page. 7315 - 7320, 2010-12
Son, JY
;
Ryu, S
;
Park, YC
;
Lim, YT
;
Shin, YS
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Shin, YH
;
Jang, HM
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carbon nanotube
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ferroelectric polymer nanodot
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field-effect transistor
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FIELD-EFFECT TRANSISTORS
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nonvolatile memory device
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2010
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