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35 nm T-gate In0.52Al0.48As/In0.53Ga0.47As/GaAs Metamorphic HEMTs with an Ultrahigh fmax of 610 GHz
- Title
- 35 nm T-gate In0.52Al0.48As/In0.53Ga0.47As/GaAs Metamorphic HEMTs with an Ultrahigh fmax of 610 GHz
- Authors
- 정윤하
- Date Issued
- 2009-02-19
- Publisher
- Korean Conference on Semiconductors
- Article Type
- Conference
- Citation
- 16th Korean Conference on Semiconductors, 2009-02-19
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg