Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects
- Title
- Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects
- Authors
- 정윤하
- Date Issued
- 2010-05-04
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/47124
- Article Type
- Conference
- Citation
- IEEE IRPS(International Reliability Physics Symposium), page. 94 - 98, 2010-05-04
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- There are no files associated with this item.
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