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Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors
- Title
- Monolithic Integration of AgTe/TiO 2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistors
- Authors
- Song, Jeonghwan; Park, Jaehyuk; Moon, Kibong; Woo, Jiyong; Lim, Seokjae; Yoo, Jongmyung; Lee, Dongwook; Hwang, Hyunsang
- Date Issued
- 2016-12-07
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- AgTe/TiN/TiO2/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO2 interface to prevent in-diffusion of Ag into the TiO2 layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (I-on/I-off) of >10(8) with a low drain voltage (0.5 V) even after the 400 degrees C annealing process.
- ISSN
- 2380-9248
- Article Type
- Conference
- Citation
- 2016 IEEE International Electron Devices Meeting (2016 IEDM), 2016-12-07
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