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Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications
- Title
- Excellent threshold switching device (I OFF ~ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V DD = 0.25 V) FET applications
- Authors
- 황현상
- Date Issued
- 2016-12-07
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Article Type
- Conference
- Citation
- 2016 IEEE International Electron Devices Meeting (2016 IEDM), 2016-12-07
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