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도핑농도에 따른 나노선 ISFET 센서의 잡음 특성

Title
도핑농도에 따른 나노선 ISFET 센서의 잡음 특성
Authors
백창기
Date Issued
2016-06-22
Publisher
대한전자공학회
URI
https://oasis.postech.ac.kr/handle/2014.oak/49241
Article Type
Conference
Citation
2016 대한전자공학회 하계학술대회, 2016-06-22
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백창기BAEK, CHANG KI
Dept. Convergence IT Engineering
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