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dc.contributor.author백록현-
dc.contributor.author정의영-
dc.contributor.authorM.J.Deen-
dc.contributor.authorC.-H.Chen-
dc.contributor.author이정수-
dc.contributor.author정윤하-
dc.date.accessioned2018-05-24T11:23:55Z-
dc.date.available2018-05-24T11:23:55Z-
dc.date.created2017-02-23-
dc.date.issued2014-09-08-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49463-
dc.publisherThe Japan Society of Applied Physics-
dc.relation.isPartOfSolid State Devices and Materials (SSDM2014)-
dc.relation.isPartOfINTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS-
dc.titlePhysical DC and Thermal Noise Models of 18 nm DG Junctionless pMOSFETs-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationSolid State Devices and Materials (SSDM2014)-
dc.citation.conferencePlaceJA-
dc.citation.titleSolid State Devices and Materials (SSDM2014)-
dc.contributor.affiliatedAuthor백록현-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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