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VLSI Processed InGaAs on Si MOSFETs with Thermally Stable, Self-Aligned Ni-InGaAs Contacts Achieving: Enhanced Drive Current and Pathway Towards a Unified S/D Contact Module
- Title
- VLSI Processed InGaAs on Si MOSFETs with Thermally Stable, Self-Aligned Ni-InGaAs Contacts Achieving: Enhanced Drive Current and Pathway Towards a Unified S/D Contact Module
- Authors
- 백록현; R.T.P.Lee; R.J.W.Hill; W.Y.Loh; S.Deora; K.Matthews; C.Huffman; K.Majumdar; T.Michalak; C.Borst; P.Y.Hung; C.-H.Chen; 염정환; 김태우; 강창용; W.-E.Wang; 김대현; C.Hobbs; P.D.Kirsch
- Date Issued
- 2013-12-09
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- IEEE International Electron Devices Meeting, 2013-12-09
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg