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dc.contributor.author백록현-
dc.contributor.author강창용-
dc.contributor.author김태우-
dc.contributor.author고동휘-
dc.contributor.author김대현-
dc.contributor.authorT.Michalak-
dc.contributor.authorC.Borst-
dc.contributor.authorD.Veksler-
dc.contributor.authorG.Bersuker-
dc.contributor.authorR.Hill-
dc.contributor.authorC.Hobbs-
dc.contributor.authorP.D.Kirsch-
dc.date.accessioned2018-05-24T11:24:11Z-
dc.date.available2018-05-24T11:24:11Z-
dc.date.created2017-02-23-
dc.date.issued2013-12-09-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49469-
dc.publisherIEEE-
dc.relation.isPartOfIEEE International Electron Devices Meeting-
dc.relation.isPartOfELECTRON DEVICES MEETING (IEDM), 2013 IEEE INTERNATIONAL-
dc.titleComprehensive Layout and Process Optimization Study of Si and III-V Technology for sub-7nm Node-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationIEEE International Electron Devices Meeting-
dc.citation.conferencePlaceUS-
dc.citation.titleIEEE International Electron Devices Meeting-
dc.contributor.affiliatedAuthor백록현-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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