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dc.contributor.author백록현-
dc.contributor.author김태우-
dc.contributor.author김대현-
dc.contributor.author고동휘-
dc.contributor.author권혁민-
dc.contributor.authorD.Veksler-
dc.contributor.authorC.Huffman-
dc.contributor.authorK.Matthews-
dc.contributor.authorS.Oktyabrsky-
dc.contributor.authorA.Greene-
dc.contributor.authorY.Ohsawa-
dc.contributor.authorA.Ko-
dc.contributor.authorH.Nakajima-
dc.contributor.authorM.Takahashi-
dc.contributor.authorT.Nishizuka-
dc.contributor.authorH.Ohtake-
dc.contributor.authorS.K.Banerjee-
dc.contributor.author신승헌-
dc.contributor.author고대홍-
dc.contributor.author강창용-
dc.contributor.authorD.Gilmer-
dc.contributor.authorR.J.W.Hill-
dc.contributor.authorW.Maszara-
dc.contributor.authorC.Hobbs-
dc.contributor.authorP.D.Kirsch-
dc.date.accessioned2018-05-24T11:24:14Z-
dc.date.available2018-05-24T11:24:14Z-
dc.date.created2017-02-23-
dc.date.issued2013-12-09-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49470-
dc.publisherIEEE-
dc.relation.isPartOfIEEE International Electron Devices Meeting-
dc.relation.isPartOfELECTRON DEVICES MEETING (IEDM), 2013 IEEE INTERNATIONAL-
dc.titleSub-100 nm InGaAs Quantum-Well (QW) MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for Low-Power Logic Applications-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationIEEE International Electron Devices Meeting-
dc.citation.conferencePlaceUS-
dc.citation.titleIEEE International Electron Devices Meeting-
dc.contributor.affiliatedAuthor백록현-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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