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dc.contributor.author백록현-
dc.contributor.author옥인조-
dc.contributor.authorK.-W.Ang-
dc.contributor.authorC.Hobbs-
dc.contributor.author강창용-
dc.contributor.authorJ.Snow-
dc.contributor.authorP.Nunan-
dc.contributor.authorS.Nadahara-
dc.contributor.authorP.Kirsch-
dc.contributor.authorR.Jammy-
dc.date.accessioned2018-05-24T11:24:30Z-
dc.date.available2018-05-24T11:24:30Z-
dc.date.created2017-02-23-
dc.date.issued2012-05-14-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49476-
dc.publisherIEEE-
dc.relation.isPartOfIEEE IWJT (2012)-
dc.relation.isPartOfINTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY-
dc.titleConformal, low-damage shallow junction technology (Xj~5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationIEEE IWJT (2012)-
dc.citation.conferencePlaceUS-
dc.citation.titleIEEE IWJT (2012)-
dc.contributor.affiliatedAuthor백록현-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
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