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Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer
- Title
- Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer
- Date Issued
- 2011-09-28
- Publisher
- The Japan Society of Applied Physics
- Article Type
- Conference
- Citation
- Solid State Devices and Materials (SSDM2011), 2011-09-28
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg