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High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability
- Title
- High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability
- Date Issued
- 2009-06-02
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- IEEE Nanotechnology Materials and Devices Conference (NMDC2009), 2009-06-02
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Related Researcher
- 백록현BAEK, ROCK HYUN
- Dept of Electrical Enginrg