GIDL analysis of underlap double gate MOSFET with variable channel thickness and doping using quantum simulation
- Title
- GIDL analysis of underlap double gate MOSFET with variable channel thickness and doping using quantum simulation
- Authors
- 백록현; 이상현; 백창기; 박찬훈; 고명동; 정윤하
- Date Issued
- 2010-06-16
- Publisher
- 대한전자공학회
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/49824
- Article Type
- Conference
- Citation
- 대한전자공학회 하계학술대회 2010, 2010-06-16
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.