Chemical Origin of Thermally Enhanced Hole Doping in Graphene on Silica Substrates
- Title
- Chemical Origin of Thermally Enhanced Hole Doping in Graphene on Silica Substrates
- Authors
- 류순민
- Date Issued
- 2016-07-14
- Publisher
- Korea Nano Technology Research Society
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/49867
- Article Type
- Conference
- Citation
- Nano Korea 2016, 2016-07-14
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.