Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors
SCIE
SCOPUS
- Title
- Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors
- Authors
- Cho, Hyeonsu; Kim, Kihyun; Yoon, Jun-Sik; Rim, Taiuk; Meyyappan, M.; Baek, Chang-Ki
- Date Issued
- 2017-05
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- Inversion-mode (IM) and depletion-mode (DM) ion-sensitive field effect transistors (ISFETs) are investigated in terms of dc characteristics, pH response and low-frequency noise (LFN) characteristics. The dc characteristics show a low threshold voltage (VTH) of 28 mV for the DM ISFETs, which is preferred for the long lifetime of the pseudo-reference electrode. The DM ISFETs exhibit an enhanced pH response in the sub-threshold region, which comes from the lower sub-threshold swing. The LFN analysis for both devices shows similar level of noise equivalent current (In.RMS) near VTH; otherwise, a reduction of In.RMS is obtained in the DM ISFETs in the linear region. In addition, the signal-to-noise ratio of the DM ISFETs is improved by 82.9% compared with the IM ISFETs in the sub-threshold region. Consequently, the DM ISFETs can be a better sensor platform for low-power, portable, and high-precision performance. ? 2001-2012 IEEE.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/51005
- DOI
- 10.1109/JSEN.2017.2674672
- ISSN
- 1530-437X
- Article Type
- Article
- Citation
- IEEE Sensors Journal, vol. 17, no. 9, page. 2792 - 2796, 2017-05
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- There are no files associated with this item.
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