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dc.contributor.author정윤하-
dc.date.accessioned2018-06-17T09:37:36Z-
dc.date.available2018-06-17T09:37:36Z-
dc.date.created2009-09-23-
dc.date.issued1986-10-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/56546-
dc.publisher47th Fall meeting of the Japan Soc. of Appl. Phys.-
dc.relation.isPartOf47th Fall meeting of the Japan Soc. of Appl. Phys.-
dc.relation.isPartOf47th Fall meeting of the Japan Soc. of Appl. Phys-
dc.titleCharacteristics of InP MIS diodes fabricated with in-situ vapor etching and in-situ CVD of PxNy-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation47th Fall meeting of the Japan Soc. of Appl. Phys., pp.639-
dc.citation.conferenceDate1986-10-01-
dc.citation.startPage639-
dc.citation.title47th Fall meeting of the Japan Soc. of Appl. Phys.-
dc.contributor.affiliatedAuthor정윤하-
dc.description.journalClass1-
dc.description.journalClass1-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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