Characteristics of InP MIS diodes fabricated with in-situ vapor etching and in-situ CVD of PxNy
- Title
- Characteristics of InP MIS diodes fabricated with in-situ vapor etching and in-situ CVD of PxNy
- Authors
- 정윤하
- Date Issued
- 1986-10-01
- Publisher
- 47th Fall meeting of the Japan Soc. of Appl. Phys.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/56546
- Article Type
- Conference
- Citation
- 47th Fall meeting of the Japan Soc. of Appl. Phys., page. 639, 1986-10-01
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